Laser Interference Lithography based 4D-printing of Nanomaterials

By tackling the limitations of the current 4D-printing of nanomaterials, this project seeks to initiate a new process paradigm, laser interference lithograph (LIL) based 4D-printing, for rapidly and accurately producing truly 3D structural and large volume 4D nanomaterials. It achieves this by combining the advantages of laser interference lithograph with the advanced intelligent inks, producing state-of-the-art capacity of 4D nanomaterials manufacturing. This new method has the potential to the mass-production of 4D nanomaterials and to the market intake of the nanomaterials. In our approach, LIL patterning is applied and the patterns are stitched to form truly 3D nanostructures and then the infiltration of intelligent inks is performed. The approach is based on some established principles and prior art gained within the consortium but is yet to be further explored.The project creates new knowledge on LIL and metalens for 3D patterning and nanometrology, bioactivity-toxicity of 4D Nanomaterials and micro-structures influence to battery performance/life.The research and innovation objectives are to integrate volumetric laser interference lithograph scanning and deep exposure for rapid, accurate, truly 3D structures fabrication, to develop optimal alignment between interference pattern units and across patterned layers based on the state-of-the-art nanometrology and characterisation for accurate formation of large volume 3D nanostructures, and to accomplish controlled infiltration for the formation the 4th dimension of nanomaterials. The new technique will be pioneered on biomedicine and engineering applications. The objectives are ambitious and require international level collaborations. The project addresses the collaborations by initiating a long-term collaboration platform among consortium members and beyond. It also emphasis staff development via various joint research and innovation and training activities, particularly, the carefully arranged secondments.